Numerical Simulation of GaN-BTG MOSFET for Suppression of SCEs

The detailed study of GaN-BTG MOSFET where GaN is used as a substrate in lieu of silicon and at the gate terminal, a stacking of silicon dioxide (SiO2) and hafnium dioxide (HfO2) is placed in a conventional trenched gate structure to obtain the proposed device. This paper addresses the comparative study of electrical characteristics such as transfer characteristics, output characteristics, transconductance, higher-order transconductance, transconductance generation factor, output conductance has been obtained for the proposed device by performing simulation using TCAD. The results validate the superiority of the proposed device in terms of performance.