Analysis of the Characteristic Current Fluctuations in the High Resistance State of HfO2-based Memristors

In this work, current fluctuations in the high resistance state of filamentary TiN/Ti/HfO
₂
/Pt memristors are investigated. It has been found that random telegraph noise due to electron trapping and de-trapping processes into and from defects located close to the filamentary path, can alter the current tunneling path and induce large stochastic current fluctuations. In addition, the occurrence of irreversible current instabilities at high stressing conditions, and their voltage and time dependence are analysed.