Device design to achieve low loss and high short-circuit capability for SiC Trench MOSFET

The trade-off between low on-resistance and high short-circuit (SC) capability crucial for silicon carbide metal-oxide-semiconductor (MOS) field-effect transistors. To break this trade-off, we clarified the design parameters that are key in improving SC capability and confirmed that our trench-etched double-diffused MOS (TED-MOS) can be suitably designed using its unique parameters to achieve low on-resistance while maintaining high SC capability.