The FinFET effect in Silicon Carbide MOSFETs

In ISPSD 2020 it has been shown that the effective mobility of a lateral 4H-SiC MOSFET could be increased by an order of magnitude through using an ultra-narrow-body design. Thus, this work presents further experimental results on a wide set of fin widths, ranging from conventional (860nm) to ultra-narrow (35nm). Furthermore, a 3D TCAD model, employing quantum corrections, is matched to experiment and applied to study these designs. It is thereby shown that the FinFET effect can have a strong impact in SiC devices and may allow for up to an 18x increase of the mobility relative to a reference width of 280nm. Finally, an optimization window of ~30-50nm is predicted for the fin width, below which the FinFET effect becomes detrimental.