Improved Clamping Capability of Parasitic Body Diode Utilizing New Equivalent Circuit Model of SBD-embedded SiC MOSFET

In the SBD-embedded SiC MOSFET, the operation of the parasitic PN diode that causes degradation of forward voltage of the diode is suppressed by the incorporated SBD. The aim of this study is to improve the maximum current at which the parasitic PN diode does not operate (I
_umax
). We confirmed the limitation of the existing equivalent circuit model used as a guideline to improve I
_umax
, and then developed a new circuit model. In addition, a new guideline to improve I
_umax
has been derived based on the equivalent circuit model. Utilizing this guideline, we have tried to improve I
_umax
of 3.3 kV SBD-embedded SiC MOSFET experimentally. I
_umax
at 200°C has been improved to 4.72 times that of the conventional device. Though it has been known that I
_umax
decreases with temperature, this significant improvement in I
_umax
is a promising result for future application of SBD-embedded SiC MOSFET above 175°C.