Addressing the challenges of sub-50nm channel LDMOS

Low on-resistance LDMOS transistors frequently utilize a self-aligned body to minimize resistance and size of the device. This paper discusses the challenges associated with ultra-short channels and proposes contrarian solutions to address them while maintaining key operating characteristics. These include a retrograde body for e-field modulation and an elegant, cost effective process flow incorporating a self-aligned body and hybrid source. The novel architectures are illustrated by simulation and 12V n-LDMOS implementation on a 0.18um SOI platform.