Rugged Dynamic Behaviour of 3.3kV SiC Power MOSFETs with High–k Gate Dielectric

This paper reports the high-temperature dynamic behaviour of a 3.3kV–rated Silicon Carbide (SiC) Power MOSFETs with high–k gate stack. Several devices have been tested under nominal and SOA bias conditions during standard inductive load switching test (ILS). Moreover, devices’ ruggedness has been tested by means of short-circuit (SC) pulses with bus voltage of 1.8kV. Lastly, the tests have shown stable threshold voltage when operating with Si-standard gate voltage swing of ±15V.