Analysis of stress generated interface of Trench MIM(metal-Insulator-Metal) Capacitor structure

Currently, research on IPD is actively conducted as a technology that satisfies high-bandwidth frequency characteristics. Among them, MIM capacitors with high-k materials are suitable for high-bandwidth frequency applications due to their low resistance and small depletion characteristics. However, stress caused by high deposition temperature during the process is a problem to be solved. In this study, ANSYS v.2020 R1 was used to analyze the stress between the insulator and the metal layer. By specifying the material properties of the insulator as a variable, the combination in which the least stress appeared at the interface when combined with TiN was confirmed. As a result, it was confirmed that the least stress when combined with HfO
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