Effect of sintering density on thermal reliability by non-pressure sintering die-attach

Silver sintering die-attach is classified into pressurized and non-pressurized processes. However, the pressurized process has some problems such as damage to the semiconductor die due to high temperature and high pressure. We have developed silver fine particles with low-temperature sintering properties aimed at realizing a highly reliable nonpressure silver sintering process. The combination of silver fine particles and micro silver particles based on the concept of the closest packing model achieved a density bond of over 90%. It was confirmed that the highly-dense sintering bonding article has excellent reliability than the low dense layer. This result shows that a high density of silver sintering layer with high die-bonding strength is necessary for excellent reliability at silver die-attach by non-pressure sintering condition.