Researches On Enhancement Of Dielectric Performance Of Two-Layer Bst Films

Ba
_0.5
Sr
_0.5
TiO
₃
/Ba
_0.5
Sr
_0.5
Ti
_1.02
O
₃
two-layer thin films are fabricated on Pt/Ti/SiO
₂
/LiNbO
₃
(LNO) substrates by using RF sputtering. Both structure and electrical performance have been investigated. The films with parallel structure are characterized by two electronic devices, such as X-ray diffraction (XRD) and scanning electron microscope (SEM). The capacitance and dielectric constant of the two-layer films are 0.91nF and 1310 respectively, which are measured by using an LCR meter. With a DC bias field of 237KV/cm applied on the BST films, a tunability of 41% are obtained. The ratio of tunability to electric field has been increased by 34%, which is paramount for low-power electronics applications.