Effects of Electromagnetic Wave Propagations in Large-Signal Analysis of Millimeter-Wave Transistors

A distributed-model-based approach is developed for small- and large-signal analyses of millimeter-wave transistors. To obtain the equivalent circuit model parameters, a structure based extraction technique is utilized. The method employs the physical geometry and structural topology of the device for finding the parameter values based on conformal mapping concepts and incremental inductance rule. The significant contribution of this approach is to incorporate the electromagnetic wave propagation effects in designing the distributed circuit which ensures achieving a universally accurate model over a very broad frequency range. This technique is applied to analyze a GaN MISHEMT device. The simulation results for the gain and output power under the small- and large-signal conditions are obtained for different device widths at various bias points and operating frequencies. To validate the performance of the proposed modeling approach, the results are compared with the measurement.