Superior High-Frequency Performance of T-Gated Poly-Si TFTs

Poly-Si TFTs possess salient features of low-temperature fabrication and the capability of being monolithically integrated with advanced CMOS electronics. As a matter of fact, poly-Si-based devices have been extensively utilized in the manufacturing of high- density 3D NAND memories [1] , [2] . However, the device performance remains to be improved in view of degraded carrier mobility due to the presence of numerous grains in the channel. This limitation hampers the application scopes of cost-effective poly-Si TFTs. Recently, we have reported a novel scheme for fabricating devices featuring T-shaped gate (T-gate) and air spacers [3] which display greatly improved static device performance. In this work, we further examine and confirm the feasibility of poly-Si TFTs for RF applications with the aid of these intriguing features.