Influence of Dielectrics and Channel Defects on the Electrical Performance of Oxide-based p-Channel TFTs for CMOS Applications

Among the other p-type oxide materials, Tin Monoxide (SnO) is of much attention due to higher hole mobility and ambipolar characteristics. In Thin Film Transistors (TFTs), the channel defects and dielectric material play an important role in the device's electrical performance. Still, the influence of SnO defects on the TFT performance is poorly understood. This paper analyses the influence of defects in the semiconductor layer and various dielectrics' impact on the electrical characteristics of the p-channel TFTs using the 2D numerical simulator. Improved numerical simulation of SnO TFT using SiO
₂
, HfO
₂
, and Al
₂
O
₃
dielectrics have been performed and compared their effect on transfer and output characteristics.