Analysis of heat transfer in GAAFET Transistor with linear doping based on single-phase lag model

The self-heating effect in gate all around FET transistors (GAAFET) is investigated in this paper. The finite element method is used to analyze the heat conduction based on the 2d single-phase lag (SPL) equation. New devices with linear doping profile in the source and drain region have been taken into consideration. The study has carried out different structures, triple material surrounding gate (TMSG), dual material surrounding gate (DMSG), and single material surrounding gate (SMSG) structure. The simulation results were compared to conventional devices with a constant doping profile. The influence of heat flux time lag values in temperature distribution has also been discussed. Results show that the linear doping profile and the right choice of the gate work function or the heat flux lag τq parameters provide better energy management profile to improve performance of technology applications.