Preparation and Electrical Characterization of Li-Doped MgZnO Thin-Film Transistors

The preparation and electrical characterization of bottom-gate Li-doped MgZnO thin film transistors were studied in this paper. These Li-doped MgZnO thin films were deposited on SiO
₂
/Si substrates employing radio frequency magnetron sputtering at room temperature. This electrical characterization showed the mobility of 9.4 cm
²
/V·s, a VTH of -7 V and a large on/off current ratio of 1.4 ×10
⁷
for Li-doped MgZnO TFT.