Nearly ideal quasi-vertical GaN Schottky barrier diode with 1010 high on/off ratio and ultralow turn on voltage via post anode annealing

In this paper, we report on demonstrating a high performance quasi-vertical GaN Schottky barrier diode. With Mo-anode and post anode annealing, the developed SBD with nearly ideal Schottky contact exhibits an ultralow turn-on voltage of 0.34 V, a high on/off ratio of 10
¹⁰
, a low differential specific on-resistance of 0.51 mΩ·cm
²
, and a breakdown voltage of 125 V. The on-state stress and off-state stress tests show that the developed SBD has a robust performance and high reliability.