Modelling of multiple-channel influence on GaN based HEMTs

We report an analytical model of the electron population and the energy band diagram of multiple-channel GaN heterostructures. It is established based on the continuity of electric displacement vector at various interfaces and the electric neutrality of the whole heterostructure. The double-channel, triple-channel, and five-channel heterostructures have been investigated, and the calculation results are compared with the numerical self-consistent Schrodinger-Poisson solution to show the feasibility of the model.