Sub-3nm Transition-Metal Dichalcogenides FETs: Theoretical Insights into the Impacts of Layer Numbers and Channel Lengths

To provide theoretical insights into the applications of transition metal dichalcogenides (TMDs) materials in sub-3nm technology nodes, TMDs field-effect-transistors (FETs) are investigated in detail by first principle calculations. It is found that on current
$(I_{on})$
in double gate FETs is higher than that of single-gate FETs, especially in the case of 2L TMDs. This can be well explained by thinner electrical equivalent oxide thickness (EOT), which helps to achieve better gate controllability. Our calculation results are important to guide designs of ultra-scaled TMDs devices.