2D Structural Variation Impact on Electrostatic Performance of Sub-5um Nanosheet Transistors Subject to Strong Quantum Confinement

Subject to the strong quantum confinement, the impact of channel geometry structure variation on the electrostatic performance parameters of sub-5nm nanosheet transistors (NSTs) is comprehensively studied by a 2D Poisson-Schrodinger (PS) quantum simulation platform, which is cautiously calibrated against the experiment data. New physical effects in NSTs including quantum confinement variation, round corner and thin channel are studied and analyzed. It is found that the electrostatic driven performance drops sharply for thin NSTs boosted by quantum confinement variation.