A Novel Normally-off Laterally Coupled p-GaN Gate HEMT

In this paper, a novel laterally coupled p-GaN gate (LCPG) structure have been implemented by the selectively hydrogen plasma treatment to fabricate GaN-on-Si HEMTs with a high breakdown voltage (BV) and a low ON-resistance
$(R_{\text{ON}})$
. Due to the coupled effect inside the LCPG, the 2DEG under the gate structure is depleted. The effect of different p-GaN to drain spacing
$(L_{\mathrm{p}-\mathrm{D}})$
on device performance is studied.