Hot carrier Degradation in Classical and Emerging Logic and Power Electronic Devices: Rethinking Reliability for Next-Generation Electronics

In this paper, we focus on the implications of self-heating effect (SHE) on hot carrier degradation of CMOS and more-than-Moore devices. We explain how hot carrier degradation, while having the same basic underlying physics, affects an LDMOS or an NCFET in very different ways compared to a planar or a FinFET transistor, suggesting a need and opportunity for developing a theory of hot carrier degradation for the next-generation electronics. We also discuss various material-device-system design strategies to reduce hot carrier degradation and suggesting open problems for further research. Most of the discussion in this paper parallels that of ref [1] and could be read as a companion article.