Development of HSQ replacement gate process for silicon nanowire MOS devices

In this paper, we have developed a replacement gate process with HSQ based on electron beam transmission exposure, which can simply and efficiently realize ideally symmetrical gate-all-around structure. HSQ replacement gate with intact morphology is successfully prepared on suspended nanowire arrays. With Si
₃
N
₄
as the filling dielectric material, HSQ replacement gate is flattened by CMP and removed by hydrofluoric acid. Finally, the self-aligned and completely controllable poly-Si gate-all-around structure is realized successfully.