Hf1-xZrxO2based bipolar selector with high uniformity and high selectivity for large-scale integration of memristor crossbars

The sneak path problem is a main limitation that affects the scale of the memristor crossbar array and hence its practical applications in memory and computing. Here, a bipolar, highly nonlinear selector based on Hf
_1-x
Zr
_x
O
₂
(HZO) was fabricated, which exhibits remarkable performance, including high selectivity of >10
⁶
, robust endurance of >10
⁷
, off-state current of ~pA and excellent uniformity, making it attractive for future high-density memristor crossbar arrays.