Re-consideration of Influence of Fluorine on SiO2 and SixNy Reliabilities

In this paper, the influence of Fluorine incorporation into SiO
₂
and Si nitride (Si
_x
N
_y
) films which are widely used in the nano electronics has been investigated. In the Si
_x
N
_y
film, fluorine makes the electron trap level shallower with increasing F dosage. On the other hand, as previously reported in the literatures, an excess fluorine degrades the SiO
₂
film markedly. Re-considering the control of Fluorine incorporation becomes important for highly reliable devices.