Reliability of Ultrathin High $-\mathcal{K}$ Dielectrics on 2D Semiconductors

Due to the absence of dangling bonds, the integration of ultra-thin dielectric on 2D semiconductors has become a huge challenge, and its reliability research has been blank before. For the first time, we report the high
$-\mathcal{K}$
dielectric reliability on Mos2. By PTCDA crystal as interface layer, we demonstrated excellent reliability of HfO
2
/PTCDA gate stack, including EBD over 8.9 MV/cm,
$\mathrm{E}_{\text{BD}}\ ^{10\text{yrs}}$
over 6.5 MV/cm and ultra-low BD rate, all of which show better reliability than HfO
2
/Si.