A first-principles study of the interface property in oxide-based RRAM

Based on the first-principles calculations, we have investigated the effect of interface on the performance of oxide-based RRAM. It is found that at the interface of oxide-based RRAM, oxygen vacancies with neutral or + 2 valence are easier to form near the interface, and O atoms at the interface tend to diffuse to vacancies. Combining with experiments, the device is electrical forming free for the interface with small thickness. With increasing the interface, the electrical performance of the device will also become worse.