Low Frequency Noise: A Show Stopper for State-of-the-art and Future Si, Ge-based and III-V Technologies

Scaling from FinFETs to horizontal and vertical single or stacked nanowires and nanosheets directly impacts the low frequency noise performance. The processing choice (e.g. gate stack, junction architecture, metal stack) also plays an important role. The noise power spectral density (PSD) of advanced Si, Ge and III-V devices is studied and compared with each other.