Non-Volatile FETs with Amorphous (Al2O3, HfO2, ZrO2, etc.) Gate Insulators

We report the non-volatile field-effect transistors (NVFETs) with amorphous gate insulators (Al
₂
O
₃
, HfO
₂
, ZrO
₂
, etc.) utilizing voltage-modulated oxygen vacancy (Vo
^q+
) related dipoles. Switchable polarization (P) in amorphous capacitors is demonstrated by P-V loops and PUND test. An Al
₂
O
₃
capacitor achieves over 10
¹⁰
cycles endurance, and an Al
₂
O
₃
NVFET achieves a memory window (MW) of 0.85 V under ±3 V@100 ns program/erase (P/E) condition; the P/E voltage can be reduced to ±1.6 V. The P/E of NVFETs can be effectively reduced by decreasing the value of the gate dielectric.