Subthreshold Swing in Silicon Gate-All-Around Nanowire MOSFET at Cryogenic Temperature

Subthreshold swing (SS) in a silicon gate-all-around (GAA) nanowire MOSFET with zero body factor is examined from room temperature (RT) down to 6.5K. SS is 60.3mV/dec at RT and decreases in proportional to temperature (T), but SS tends to saturate below 36K, similar to transistors with non-zero body factor. The reasons for the phenomena are discussed.