Small-Hysteresis Flexible Carbon Nanotube Thin-Film Transistors using Stacked Architecture

A small-hysteresis carbon nanotube thin-film transistors through the construction of stacked architecture has been proposed due to an interaction of the effects of surface and interface trapped charges. With the help of photoresist gate dielectric, the through-holes between the upper and lower devices can be easily patterned and formed with the self-assembly interconnections. The as-fabricated device can exhibit quite small hysteresis of 0.1 V at various bending radius indicating the good flexibility and stability.