Lateral p-n Homojunction formed by Local Doping for High-Performance Photodetector

A novel and non-degenerate doping strategy for 2D transition metal dichalcogenides is proposed to form a lateral p-n junction in the application of optoelectronics. A high rectification ratio of ~10
³
indicates that a high-quality WSe
₂
p-n junction is formed through Cetyltrimethyl Ammonium Bromide doping. The device shows superior photo-responsivity of 42.02 A/W, a specific detectivity of 10
¹¹
Jones, I
_light
/I
_dark
of 10
³
under light illumination, demonstrating its promising applications for high-sensitive photo detector and low-power photo electronic devices.