A DC-DC converter utilizing $\beta-\text{Ga}_{2}\mathrm{O}_{3}$ Schottky barrier diode

The
$\beta-\text{Ga}_{2}\mathrm{O}_{3}$
Schottky barrier diode (SBD) is fabricated and actualized a breakdown voltage of 472 V. A SPICE model for
$\beta-\text{Ga}_{2}\mathrm{O}_{3}$
Sbd is derived from experimental results and applied to DC-DC converter circuit simulation. Then the
$\beta-\text{Ga}_{2}\mathrm{O}_{3}$
SBD is implemented in a DC-DC converter circuit and acquired the conversion efficiency of 94.8%, indicating the great potential of Ga
2
O
3
-based devices and circuits.