Fabrication on n-Ga2O3/p-GaN diode by wet-etching lift-off and transfer-print

In the paper, we transfer-print a 5 × 5mm
²
n-type β-Ga
₂
O
₃
nanomembrane onto a p-GaN/sapphire substrate to form an n-Ga
₂
O
₃
/p-GaN diode, after repairing the dry-etching damage of p-GaN during the device fabrication. The diode has excellent electrical performance, including high rectification ratio (~3.65×10
⁶
at ±5 V) and low dark current density (~2.19×10
^-7
Acm
^-2
at -5 V). These results indicate that wet-etching lift-off and transfer-print technique can be used to fabricate high quality Ga
₂
O
₃
-based heterojunction bipolar devices.