Heterogenous Integration of InP DHBT and Si CMOS by $30\mu\mathrm{m}$ Pitch Au-In Microbumps

In this work, we demonstrate heterogeneous integration of InP DHBT and Si CMOS on the same Silicon substrate based on 30μm Au-In microbump bonding technology, InP DHBTs are vertical stacked at the top of the Si CMOS wafer. Meanwhile, we exhibit a InP-on-Si CMOS 14Gbps 1:16 demultiplexer as example, which shows the potential to integrate InP and Si CMOS on the same chip to take advance of the two different material systems.