Role of Interfacial Traps at SiO2/Si Interface in Negative Capacitance Field Effect Transistor (NCFET) Based on Transient Negative Capacitance (NC) Theory

Based on the transient NC theory, the impact of interfacial traps at SiO
₂
/Si interface (D
_it
) is studied in this work. We use the NCFET that with Metal/Ferroelectric/Interlayer/Semiconductor (MFIS) gate structure in our simulation. Our work points out that the D
_it
can reduce the subthreshold swing (SS) by improving the transient NC effect. The physical origin is the tuning of the mismatch between the free charges (Qf) and polarization (P) by D
_it
. Our work shows that the D
_it
can tune the transient NC phenomenon.