Three-Orders Improvement of Endurance in Hafina Based MFS Capacitor through CF4 Plasma Pre-Treatment

In hafina ferroelectric based FeFET device, endurance issue is one of the most critical concern. In this work, an effective approach of CF4 plasma pre-treatment on the Si surface before Hf0.5Zr0.5O2 deposition was employed to improve interface quality of metal-ferroelectric-semiconductor (MFS) capacitor, which is the key component of FeFET device. The F plasma pre-treatment was found helpful to reduce the leakage current and increase the breakdown voltage of MFS capacitor. In the sample treated with CF4 plasma for 10 seconds, the endurance property of MFS capacitor was successfully enhanced to 10
⁸
cycles, which are 3 orders higher than the non-treated sample. Along with the improvement of endurance, the coercive field was also found increased 20 percent, which is beneficial to increase the memory window (2Ec) of FeFET. The observed phenomenon could be well understood by the improved interface quality and reduced leakage current.