Effect of Low Temperature Annealing on pn Junction Formation using Si Paste

Low temperature aluminum-induced crystallization (AIC) was successfully introduced to make a Si paste pn junction device. The Si paste was fabricated by using a planetary ball miller from Si source materials. Oxidation of Si paste was suppressed by low temperature AIC at 400°C. The ideality factor of 4.3 with a rectification ratio of 3200 was obtained. Si paste can be a novel technology candidate to lower the cost of Si devices such as solar cells.