Growth Optimization of Low-Pressure Chemical Vapor Deposition Silicon Nitride Film

We present a systematic investigation on growth parameters (the ratio of reactive gases and total flow rate) of silicon nitride (StN
^x
) films by Low-Pressure Chemical Vapor Deposition (LPCVD). The post-growth annealing condition would influence the bonds and electrical properties of the SiN
x.
When the concentration of SiH
2
Cl2 and NH3 is 20sccm/250sccm and with post-growth annealing in O
2
at 650°C, the electrical performance of SiN
x
film is the best, which is evaluated by capacitance-voltage, dielectric breakdown and reliability test. Increasing the total flow rate of gas source can improve the reliability of device.