Doping and Dopingless Tunnel Field Effect Transistor

For Low power consumption, an emerging device that depends on lowering the supply voltage with downscaling is proposed which is known as the Tunnel-FET (TFET). In general, MOSFETS (Metal Oxide Semiconductor Field Effect Transistors) is used for the low power transistors. Still, the SS (Sub-threshold Swing) of MOSFET is bounded to 60 mv/decade for further reduction in supply voltage. The dynamic and static power consumption of MOSFETs is increased with the downscaling. Hence, for energy-efficient and low power consumption with improved sub-threshold swing, TFET is auspicious replacement of MOSFETs. The structure of MOSFET and TFET is approximately like each other with a different fundamental working mechanism. TFET is a gated p-i-n diode structure, and current conduction in between the energy bands of the channel and source by switching mechanism of quantum tunneling (band to band tunnel mechanisms) through a barrier. This paper aims to do a literature review of TFET from physically doped TFET to Dopingless TFETs. This survey paper studies and reviews physically doped Double Gate TFET (DG-TFET) available for design. After that, dopingless TFET is studied and shows its dominating performance.