Design and Development of a S Band Space Grade Medium Power Balanced Amplifier

This paper describes the design, development and measured results of space grade medium power balanced amplifier at S Band. The amplifier is designed using discrete bipolar junction transistor as an active device. It provides desired in-band response at 3200 ± 40 MHz with flatness of 0.29 dB, 19.87 dB gain at P1 dB compression and input output return loss better than 19.4 dB. Balanced amplifier topology is used to meet the gain, power and derating requirement of the amplifier circuit. The amplifier has been characterized over temperature range from -15°C to 55°C.