Analytical Model of β-Ga2O3 MESFET for Transconductance Optimization

Transconductance of β-Ga
₂
O
₃
MESFET is graphically calculated by analyzing characteristics curve of the designed MESFET for different channel height, electron concentration, gate to source voltage (V
_GS
) and drain to source voltage (V
_ds
). With decreasing channel height and electron concentration the value of the transconductance also decreased. The transconductance also decreased with the increasing value of negative gate to source voltage (V
_GS
). The designed device is subjected to higher negative value of gate to source voltage (V
_GS
) and acted satisfactorily as the β-Ga
₂
O
₃
has higher band gap and other advantages. By observing the computed transconductances it is seen that the designed MESFET exhibits high transconductance value and ensures high electron mobility of the device as well. The results that are found are suitable and the designed MESFET can be surely used as an amplifier and other switching ICs in various nano electronic circuits.