Nanosecond-scale and self-heating free characterization of advanced CMOS transistors utilizing wave reflection

We demonstrate a novel nanosecond scale electrical characterization technique utilizing the natural reflection of alternating current (AC) signals for MOSFETs characterizations. With this approach, the Joule heating effect is negligible and the test-induced extra stress on the device under test (DUT) can be minimized, which is crucial for certain reliability applications, such as the characterization of bias temperature instability and self-heating effects. Two more potential applications of this method, BTI and inverter stress simulation, have also been proposed. This reflection based ultra-fast measurement method (RUFM) is useful for ultra-fast device impedance measurement.