History effect investigation in SOI MOSFET for minimizing impact on circuit performance

Floating body SOI MOSFET is exposed to hysteresis in transient response, which is referred as history effect. High speed switching circuits are mostly affected by this phenomenon. Single stage inverter circuit has been considered for the characterization of history effect. Impact ionization rate, carrier recombination rate and operating temperature mostly determine the time required for the circuit to reach dynamic equilibrium from hysteresis. Charging and discharging rate of floating body charge in the SOI layer has been investigated in TCAD for better understanding of history effect in the Inverter.