Study of Proximity Effects in HSQ e-Beam Resist on TiO2 Thin Film

Experimental and simulation results of the proximity effects study for the case of the high-resolution electron beam resist Hydrogen Silsesquioxane (HSQ) on TiO
₂
thin film at 40 keV electron energy are presented and discussed. The dependence of resist pillar size and shape on the exposure dose, resist thickness and resist patterns configuration is studied for thick HSQ. The influence of the proximity effects on the precision and limitations of electron beam lithography is discussed.