Investigation of In0.53 Ga0.47 As -Based Buffered Step Doping (BSD) LDMOS

In the modern applications of domestic and industrial devices, the demand for high-frequency switches with smaller on-resistance (R
on
) and high breakdown voltage (BV) has increased dramatically. To achieve lower resistance (R
on
) with high breakdown voltage (BV) has always been a great challenge for scientists as both parameters are contrary to each other. The laterally diffused (LD) MOS structures have shown better performance in support of the above requirement. An attempt to investigate the performance of a buffered step doping (BSD) LDMOS with high mobility material In
0.53
Ga
0.47
As has been performed and presented in this paper. The parameters such as drain-current (I
d
), output conductance (g
o
), and breakdown voltage (BV) have been examined using ATLAS (2D) device simulator and compared with In
0.53
Ga
0.47
As based LDMOS.