Facile development of InP nanowires via metal-assisted chemical etching and their optical properties

We report on developing Indium phosphide nanowires (InP NWs) via a cost-effective, metal-assisted photochemical electroless etching (MacEtch) technique with silver as the catalyst. Several micrometre length nanowires fabricated with optimized etching conditions were observed with SEM. The synthesis mechanism of InP NWs using the MacEtch method is presented. Photoluminescence (PL) measurements of InP NWs shows a red-shift PL peak compared to the as-grown sample associated with the relaxation of compressive strain. This fast and feasible nanowire fabrication method might be used for the development of power optoelectronics devices and gas sensors.