L-band SSPA for Future Payloads exploiting GaN Technology

A L-band solid-state power amplifier (SSPA) for future payloads has been implemented using GaN Technology in this paper.The main performance of the GaN SSPA is superior to the GaAs SSPA.This paper propose device level redundancy of GaN along with various techniques such as gain compensation,Automatic level control and different parameter telemetry.The output power of SSPA is greater than 46dBm(20W), and efficiency achieves 50% at L band with an associated power gain of 59dB over the temperature range from -40 to +70 degC.The SSPA has the dimensions of 200mm× 130mm×54mm with a weight of 1.5kg.At the same time, the thermal design and Simulation of SSPA are carried out, and the reliability test is completed.