Microstrip Memristive Switch and Its Applications to RF Devices

In order to achieve the characteristics of non-volatility and low power consumption, a memristive RF switch is proposed on a microstrip line with good performance up to 5 GHz. Based on Conductive bridging random access memory (CBRAM) technology, this switch uses metal-insulator-metal (MIM) structure, Copper/Nafion/Au specifically. Then, a reconfigurable bandpass filter is designed at 0.91 and 1.0 GHz with the ON-/OFF-state memristive RF switches, respectively. A 180° reflective type phase shifter is designed at 5 GHz with the microstrip memristive RF switches. These memristive RF devices may push the envelope for intelligent RF systems.