Fabrication and Characteristics of Aluminum Oxide MIM Capacitors with Interconnections using BCB-based MEMs Technology

This paper presents the fabrication and characteristics of aluminum oxide metal-insulator-metal (MIM) capacitors in MEMS technology. Atomic Layer Deposition (ALD) technique has been used to form the thin and high-quality aluminum oxide insulator film. Benzocyclobutene (BCB) and Cu interconnects were used to realize interconnection with its high frequency performance measured. The capacitance value can be obtained from 30 pF to 3 nF with its minimum quadratic voltage linearity of 100 ppm/V
²
. The resonant frequency of 128 MHz for a example of 1.5 nF capacitor has been designed and measured with its quality factor studied. The simulated and measured results of these MIM capacitors show close agreements. These types of MIM capacitors offer the advantages of compact configuration and can be easy integrated with other devices.