A Ku-band Low Noise Amplifier Design in 0.13-um SiGe BiCMOS Technology

a Ku-band monolithic low noise amplifier (LNA) is presented in this paper, which is fabricated in commercial 0.13-um SiGe BiCMOS technology. An inductively degenerated cascode topology combined with small resistance in series at base of HBT transistor are used to improve the noise figure and stability. The results show that this single-stage LNA achieves 3.2 dB minimum noise figure at 16.4 GHz and a highest power gain of 15 dB at 16 GHz with a 3-dB bandwidth from 14 to 18.3 GHz. The total area of this LNA is 720×580 um
²
including pads.